Texas Instruments

TPD4E1B06DCKR  

TVS Diodes

The TPD4E1B06DCKR is a high-voltage, high-side MOSFET driver from Texas Instruments. It is designed to drive N-channel MOSFETs with voltages up to 60V in applications such as motor control, power management, and power conversion.

Key Features:

• High-voltage capability: The TPD4E1B06DCKR can handle supply voltages up to 60V, making it suitable for high-voltage applications.
• High-side switching: The device is designed to drive N-channel MOSFETs on the high side of the load, simplifying the overall circuit design.
• Wide operating temperature range: The TPD4E1B06DCKR operates over a temperature range of -40°C to +125°C, making it suitable for use in harsh environments.
• Logic-level input interface: The device features a logic-level input interface that is compatible with most microcontrollers and logic families.
• Short-circuit and over-current protection: The TPD4E1B06DCKR includes built-in protection features to guard against short-circuit and over-current conditions.

Applications:

• Motor control: The TPD4E1B06DCKR is ideal for driving high-voltage MOSFETs in brushless DC motor control applications.
• Power management: The device can be used to drive MOSFETs in power management circuits, such as battery management systems and power supplies.
• Power conversion: The TPD4E1B06DCKR is suitable for driving MOSFETs in power conversion applications, such as DC-DC converters and inverters.

Overall, the TPD4E1B06DCKR is a versatile MOSFET driver that offers high-voltage capability, high-side switching, and built-in protection features, making it well-suited for a range of power management and control applications.

TPD4E1B06DCKR Documents

Download datasheets and manufacturer documentation for TPD4E1B06DCKR

PCN Assembly/Origin :

Assembly Site 24/Apr/2023      

Datasheets :

TPD4E1B06 Datasheet      

HTML Datasheet :

TPD4E1B06 Datasheet      

PCN Design/Specification :

TPD4E1B06DCKR Updates 23/Jul/2014