Texas Instruments

UCC28811DR

The UCC28811DR is a high-voltage, high-power gate driver from Texas Instruments. It is designed to drive power MOSFETs and IGBTs in applications such as motor control, power supplies, and renewable energy systems.

Description:

The UCC28811DR is a monolithic integrated circuit that provides high-voltage gate drive for power MOSFETs and IGBTs. It features a high-voltage output stage capable of driving gates with voltages up to ±20V. The device also includes built-in protection features such as overcurrent protection, undervoltage lockout, and thermal shutdown.

Features:

• High-voltage gate drive capable of driving gates with voltages up to ±20V
• Monolithic integrated circuit design for high reliability
• Built-in protection features such as overcurrent protection, undervoltage lockout, and thermal shutdown
• Wide supply voltage range of 10V to 60V
• High noise immunity with ±400V DC immunity and 4kV ESD protection
• Small package size of 5mm x 7mm

Applications:

• Motor control for industrial and automotive applications
• Power supplies for telecommunications and computing equipment
• Renewable energy systems such as solar inverters and wind turbines
• Battery charging systems for electric vehicles and energy storage systems
• High-voltage power conversion and conditioning systems

Overall, the UCC28811DR is a versatile and reliable high-voltage gate driver that can be used in a wide range of power electronic applications. Its monolithic design, built-in protection features, and high noise immunity make it a popular choice for demanding applications that require high reliability and performance.