TT Electronics/IRC_GS4B0130R9JDT
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TT Electronics/IRC
GS4B0130R9JDT

50-GS4B0130R9JDT
PDF Datasheet
Ceramic Resistor Network, SOIC-C Series,8-Pin Narrow SOIC, Bussed elements,±100ppm/°C, 30.9Ohm, absolute tolerance ±5%, ratio tolerance ±0.5%
30 weeks

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Tech Specifications

Circuit Designator
BUS
Number of Resistors
7
HTS
8533.21.00.20
Case Style
Ceramic
ECCN (US)
EAR99
Temperature Range @ Derated Power (°C)
70 to 125
PPAP
No
Automotive
No
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GS4B0130R9JDT Description

GS4B0130R9JDT Description

The GS4B0130R9JDT from TT Electronics/IRC is a high-performance 7-resistor bussed network in an 8-pin narrow SOIC package, designed for precision applications requiring stable thin-film resistance. With a 30.9Ω resistance per element, this ceramic-based network offers a ±5% absolute tolerance and ±0.5% ratio tolerance, ensuring consistent performance in matched circuits. Its thin-film technology and ±100ppm/°C temperature coefficient provide excellent stability across a wide operating range of -55°C to +125°C, derated to 70°C to 125°C for power dissipation. The SOIC-C series construction features a compact 4.9mm x 5.99mm footprint with a 1.63mm profile, ideal for space-constrained designs. Rated for 100V maximum voltage and 0.4W total power (0.05W per resistor), it combines reliability with efficiency.

GS4B0130R9JDT Features

  • Bussed Network Design: 7 resistors connected in a common bus configuration, simplifying PCB layout for shared-voltage applications.
  • High Precision: ±5% absolute tolerance and ±0.5% ratio tolerance for matched impedance requirements.
  • Robust Construction: Ceramic substrate with gull-wing terminations ensures durability and solderability.
  • Wide Temperature Range: Operates from -55°C to +125°C, with derated power up to 125°C.
  • Low TCR: ±100ppm/°C minimizes resistance drift under thermal stress.
  • Space-Efficient: SOIC package (4.9mm x 5.99mm x 1.45mm) suits high-density assemblies.
  • Surface-Mount Ready: 1.27mm pitch for compatibility with automated PCB assembly.

GS4B0130R9JDT Applications

  • Voltage Division Circuits: Precision dividers in sensor interfaces or ADC reference networks.
  • Bus Termination: Signal integrity in high-speed digital systems (e.g., DDR memory, FPGA I/O).
  • Automotive Electronics: Non-automotive grade but suitable for industrial-grade ECU peripherals.
  • Power Management: Current limiting or pull-up/down networks in power supplies.
  • Medical Devices: Stable resistance for analog signal conditioning where low drift is critical.

Conclusion of GS4B0130R9JDT

The GS4B0130R9JDT excels in applications demanding tight tolerance, thermal stability, and compact form factors. Its ceramic thin-film construction and bussed topology reduce component count while maintaining performance, making it a cost-effective solution for industrial, communications, and instrumentation designs. While not PPAP or automotive-qualified, its 125°C rating and low TCR ensure reliability in harsh environments. Engineers will appreciate its balance of precision, power handling, and space savings in modern electronics.

FAQ

What voltage specification is listed for GS4B0130R9JDT?
The listed voltage-related specification for GS4B0130R9JDT is 100.
Are there related or alternative parts for GS4B0130R9JDT?
What is the mounting type of GS4B0130R9JDT?
What is the standard lead time for GS4B0130R9JDT?
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