TT Electronics/IRC_GS8B032612GAT
original

TT Electronics/IRC
GS8B032612GAT

50-GS8B032612GAT
PDF Datasheet
Ceramic Resistor Network, SOIC-C Series,16-Pin Narrow SOIC, Bussed elements,±25ppm/°C, 26.1KOhm, absolute tolerance ±2%, ratio tolerance ±0.05%
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Tech Specifications

Circuit Designator
BUS
Number of Resistors
15
HTS
8533.21.00.20
Case Style
Ceramic
ECCN (US)
EAR99
Temperature Range @ Derated Power (°C)
70 to 125
PPAP
No
Automotive
No
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GS8B032612GAT Description

GS8B032612GAT Description

The GS8B032612GAT from TT Electronics/IRC is a high-performance ceramic resistor network designed for precision applications. Packaged in a 16-pin narrow SOIC (SOIC-C series), it features 15 bussed resistors with a 26.1KΩ resistance value and a tight ±2% absolute tolerance. The device operates over a wide temperature range of -55°C to +125°C, with a derated power range of 70°C to 125°C, ensuring reliability in demanding environments. Its thin-film technology delivers excellent stability, supported by a low ±25ppm/°C temperature coefficient. With a 0.8W total power rating (0.05W per resistor) and a 100V maximum voltage rating, this network is ideal for high-density PCB designs requiring consistent performance.

GS8B032612GAT Features

  • Ceramic substrate for enhanced thermal and mechanical stability.
  • Bussed configuration simplifies circuit design by connecting multiple resistors to a common node.
  • Narrow SOIC package (9.91mm x 5.99mm x 1.45mm) saves board space while supporting surface-mount (Gull Wing) termination.
  • Low TCR (±25ppm/°C) ensures minimal resistance drift across temperature fluctuations.
  • High power density (0.8W total) with derated operation up to 125°C.
  • Precision ratio tolerance (±0.05%) for matched resistor applications.
  • Non-automotive grade (PPAP: No), suitable for industrial and commercial use.

GS8B032612GAT Applications

This resistor network excels in:

  • Voltage divider circuits requiring tight tolerance and low drift.
  • Signal conditioning in instrumentation and test equipment.
  • Analog front-end designs for sensors and data acquisition systems.
  • Power supply feedback networks where stability is critical.
  • Industrial control systems benefiting from its robust ceramic construction.

Conclusion of GS8B032612GAT

The GS8B032612GAT stands out for its precision, compact form factor, and reliability in harsh environments. Its ceramic thin-film construction, low TCR, and bussed architecture make it a superior choice over polymer-based networks or discrete resistors. While not RoHS-compliant, it remains a go-to solution for high-performance analog and power management circuits where accuracy and thermal resilience are paramount. Engineers will appreciate its balance of density, power handling, and stability in space-constrained designs.

FAQ

What voltage specification is listed for GS8B032612GAT?
The listed voltage-related specification for GS8B032612GAT is 100.
Is GS8B032612GAT currently in stock?
What package or case is GS8B032612GAT available in?
What is GS8B032612GAT?
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