

Vishay General Semiconductor – Diodes Division
1N6484HE3/97
280-1N6484HE3/97
PDF Datasheet
DIODE GEN PURP 1KV 1A DO213AB
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Responsible qualityTech Specifications
Speed
Standard Recovery >500ns, > 200mA (Io)
Capacitance @ Vr F
8pF @ 4V, 1MHz
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Active
Supplier Device Package
DO-213AB
Current - Reverse Leakage @ Vr
10 µA @ 1000 V
Series
SUPERECTIFIER®
1N6484HE3/97 Description
Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single Diodes that the 1N6484HE3/97 belongs to can be classified under the Discrete Semiconductors. 1N6484HE3/97 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. 1N6484HE3/97 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Vishay General Semiconductor – Diodes Division plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Vishay General Semiconductor – Diodes Division is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Vishay General Semiconductor – Diodes Division builds trust with consumers and enhances the overall reputation of their products.
FAQ
What voltage specification is listed for 1N6484HE3/97?
The listed voltage-related specification for 1N6484HE3/97 is 1.1 V @ 1 A.
What operating temperature range does 1N6484HE3/97 support?
What is 1N6484HE3/97?
What is the mounting type of 1N6484HE3/97?
Are there related or alternative parts for 1N6484HE3/97?




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