Vishay General Semiconductor – Diodes Division_B80C800G-E4/51
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Vishay General Semiconductor – Diodes Division
B80C800G-E4/51

299-B80C800G-E4/51
PDF Datasheet
BRIDGE RECT 1P 125V 900MA WOG
10 Weeks

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Tech Specifications

Operating Temperature
-40°C ~ 125°C (TJ)
Voltage - Peak Reverse (Max)
125 V
Diode Type
Single Phase
ECCN
EAR99
Mounting Type
Through Hole
Product Status
Active
Supplier Device Package
WOG
Current - Reverse Leakage @ Vr
10 µA @ 125 V
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B80C800G-E4/51 Description

Bulk provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Bridge Rectifiers that the B80C800G-E4/51 belongs to can be classified under the Discrete Semiconductors. B80C800G-E4/51 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. B80C800G-E4/51 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Vishay General Semiconductor – Diodes Division plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Vishay General Semiconductor – Diodes Division is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Vishay General Semiconductor – Diodes Division builds trust with consumers and enhances the overall reputation of their products.

FAQ

What voltage specification is listed for B80C800G-E4/51?
The listed voltage-related specification for B80C800G-E4/51 is 125 V.
What operating temperature range does B80C800G-E4/51 support?
Is B80C800G-E4/51 currently in stock?
What package or case is B80C800G-E4/51 available in?
What is the standard lead time for B80C800G-E4/51?
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