

Vishay General Semiconductor – Diodes Division
VS-ETH0806FP-M3
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VS-ETH0806FP-M3 Description
VS-ETH0806FP-M3 is a product from Vishay General Semiconductor's Diodes Division. It is a high-speed, low-capacitance diode designed for use in Ethernet physical layer applications.
Description:
The VS-ETH0806FP-M3 is a small-signal diode that is designed to operate in high-speed Ethernet applications. It is available in a compact 0806 surface-mount package, making it suitable for use in space-constrained applications.
Features:
- Low capacitance: The VS-ETH0806FP-M3 has a low capacitance value of 0.3 pF, which helps to minimize signal distortion and improve signal integrity in high-speed applications.
- High-speed operation: The diode is designed to operate at high speeds, making it suitable for use in Ethernet applications that require high data transfer rates.
- Low forward voltage: The VS-ETH0806FP-M3 has a low forward voltage of 0.7 V, which helps to reduce power consumption in Ethernet applications.
- High reliability: The diode is manufactured using high-quality materials and processes to ensure high reliability and long-term performance.
Applications:
The VS-ETH0806FP-M3 is commonly used in Ethernet physical layer applications, such as:
- 10/100/1000BASE-T Ethernet PHYs
- Ethernet switches and routers
- Power over Ethernet (PoE) applications
- Gigabit Ethernet applications
In addition to these applications, the VS-ETH0806FP-M3 can also be used in other high-speed data communication applications that require low capacitance and high-speed performance.



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