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IRF520SPBF
278-IRF520SPBF
PDF Datasheet
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
12 weeks
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Tech Specifications
Package/Case
TO-263-3
Continuous Drain Current (ID)
9.2A
Drain to Source Voltage (Vdss)
100V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
360pF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
IRF520SPBF Description
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
FAQ
Does IRF520SPBF have quantity-based pricing?
Yes. IRF520SPBF currently has 3 pricing tier(s), starting from 1 units.
What voltage specification is listed for IRF520SPBF?
Is IRF520SPBF currently in stock?
What is IRF520SPBF?
What package or case is IRF520SPBF available in?
Availability
(In Stock :
11 )
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.24057 | $2.24 |
| 10+ | $1.88057 | $18.81 |
| 30+ | $1.65428 | $49.63 |
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Unit Price $2.24057
Subtotal $2.24
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