Vishay
IRFBF30

278-IRFBF30
PDF Datasheet
Power Field-Effect Transistor, 3.6A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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ISO9001
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ISO45001
ISO14001
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Tech Specifications

Package/Case
TO-220-3
Continuous Drain Current (ID)
3.6A
Drain to Source Resistance
3.7R
Drain to Source Voltage (Vdss)
900V
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.2nF
Lead Free
Contains Lead
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IRFBF30 Description

Power Field-Effect Transistor, 3.6A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

FAQ

What operating temperature range does IRFBF30 support?
IRFBF30 has an operating temperature range of 150°C.
What package or case is IRFBF30 available in?
What voltage specification is listed for IRFBF30?
Are there related or alternative parts for IRFBF30?
Is IRFBF30 currently in stock?
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