Vishay_SI1401EDH-T1-GE3
original

Vishay
SI1401EDH-T1-GE3

278-SI1401EDH-T1-GE3
PDF Datasheet
P-Channel MOSFET, -12V, 4A, 34mR, SOT-363
18 weeks

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Tech Specifications

Package/Case
SOT-363-6
Continuous Drain Current (ID)
4A
Drain to Source Resistance
34mR
Drain to Source Voltage (Vdss)
-12V
Drain-source On Resistance-Max
34MR
Gate to Source Voltage (Vgs)
10V
Lead Free
Lead Free
Max Operating Temperature
150°C
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SI1401EDH-T1-GE3 Description

P-Channel MOSFET, -12V, 4A, 34mR, SOT-363

FAQ

What is SI1401EDH-T1-GE3?
SI1401EDH-T1-GE3 is a Single FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.
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