German
Japanese
Portuguese
Korea
Mexico
Dutch
Vishay
SI1902DL-T1-GE3
278-SI1902DL-T1-GE3
PDF Datasheet
MOSFET 2N-CH 20V 0.66A SC-70-6
17 weeks
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Package/Case
SOT-363-6
Continuous Drain Current (ID)
660mA
Drain to Source Resistance
385mR
Drain to Source Voltage (Vdss)
20V
Fall Time
10ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Max Operating Temperature
150°C
SI1902DL-T1-GE3 Description
MOSFET 2N-CH 20V 0.66A SC-70-6
FAQ
What is the mounting type of SI1902DL-T1-GE3?
SI1902DL-T1-GE3 uses a Surface Mount mounting style based on the listed product specifications.
Is SI1902DL-T1-GE3 currently in stock?
What is the standard lead time for SI1902DL-T1-GE3?
What voltage specification is listed for SI1902DL-T1-GE3?
Are there related or alternative parts for SI1902DL-T1-GE3?
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
