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SI1922EDH-T1-GE3
278-SI1922EDH-T1-GE3
PDF Datasheet
2 N-Ch MOSFET, 20V, 1.3A, 198mR, SOT-363
18 weeks
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Tech Specifications
Package/Case
SOT-363-6
Continuous Drain Current (ID)
1.3A
Drain to Source Resistance
198mR
Drain to Source Voltage (Vdss)
20V
Fall Time
220ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
8V
Height
1.1mm
SI1922EDH-T1-GE3 Description
2 N-Ch MOSFET, 20V, 1.3A, 198mR, SOT-363
FAQ
What operating temperature range does SI1922EDH-T1-GE3 support?
SI1922EDH-T1-GE3 has an operating temperature range of 150°C.
Is SI1922EDH-T1-GE3 currently in stock?
What is the standard lead time for SI1922EDH-T1-GE3?
What package or case is SI1922EDH-T1-GE3 available in?
What is SI1922EDH-T1-GE3?
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