


Vishay
SI1926DL-T1-GE3
278-SI1926DL-T1-GE3
PDF Datasheet
MOSFET 2N-CH 60V 0.37A SOT363
9 weeks
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Responsible qualityTech Specifications
Continuous Drain Current (ID)
370mA
Drain to Source Voltage (Vdss)
60V
Fall Time
14ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
18.5pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
SI1926DL-T1-GE3 Description
MOSFET 2N-CH 60V 0.37A SOT363
FAQ
What is the mounting type of SI1926DL-T1-GE3?
SI1926DL-T1-GE3 uses a Surface Mount mounting style based on the listed product specifications.
What is SI1926DL-T1-GE3?
What operating temperature range does SI1926DL-T1-GE3 support?
What is the standard lead time for SI1926DL-T1-GE3?
Are there related or alternative parts for SI1926DL-T1-GE3?



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