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SI1965DH-T1-E3
278-SI1965DH-T1-E3
PDF Datasheet
P-CH MOSFET, 12V, 1.14A, 390mR, 2-Ch, SC70-6
18 weeks
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Continuous Drain Current (ID)
1.14A
Drain to Source Resistance
390mR
Drain to Source Voltage (Vdss)
12V
Drain-source On Resistance-Max
390MR
Fall Time
27ns
Gate to Source Voltage (Vgs)
8V
Height
1mm
Input Capacitance
120pF
SI1965DH-T1-E3 Description
P-CH MOSFET, 12V, 1.14A, 390mR, 2-Ch, SC70-6
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