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SI2308DS-T1
285-SI2308DS-T1
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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Tech Specifications
Package/Case
SOT-23-3
Continuous Drain Current (ID)
2A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
160mR
Drain to Source Voltage (Vdss)
60V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
SI2308DS-T1 Description
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
FAQ
What voltage specification is listed for SI2308DS-T1?
The listed voltage-related specification for SI2308DS-T1 is 60V.
Are there related or alternative parts for SI2308DS-T1?
Is SI2308DS-T1 currently in stock?
What is SI2308DS-T1?
What operating temperature range does SI2308DS-T1 support?
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