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SI2309DS-T1
285-SI2309DS-T1
Small Signal Field-Effect Transistor, 0.00125A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN
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Tech Specifications
Package/Case
SOT-23-3
Continuous Drain Current (ID)
1.25A
Drain to Source Resistance
340mR
Drain to Source Voltage (Vdss)
-60V
Fall Time
11.5ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
SI2309DS-T1 Description
Small Signal Field-Effect Transistor, 0.00125A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN
FAQ
What is SI2309DS-T1?
SI2309DS-T1 is a RF FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.
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What operating temperature range does SI2309DS-T1 support?
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