


Vishay
SI2323DDS-T1-GE3
278-SI2323DDS-T1-GE3
PDF Datasheet
Small Signal Field-Effect Transistor, 5.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
6 weeks
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Package/Case
SOT-23
Continuous Drain Current (ID)
-5.3A
Drain to Source Resistance
39mR
Drain to Source Voltage (Vdss)
-20V
Fall Time
11ns
Gate to Source Voltage (Vgs)
8V
Input Capacitance
1.16nF
Lead Free
Lead Free
SI2323DDS-T1-GE3 Description
Small Signal Field-Effect Transistor, 5.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
FAQ
What operating temperature range does SI2323DDS-T1-GE3 support?
SI2323DDS-T1-GE3 has an operating temperature range of 150°C.
What package or case is SI2323DDS-T1-GE3 available in?
Is SI2323DDS-T1-GE3 currently in stock?
What is the mounting type of SI2323DDS-T1-GE3?
What is the standard lead time for SI2323DDS-T1-GE3?
Availability
(In Stock :
2783 )
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 50+ | $0.34819 | $17.41 |
| 150+ | $0.30736 | $46.10 |
| 500+ | $0.24360 | $121.80 |
| 3000+ | $0.22206 | $666.18 |
| 6000+ | $0.20912 | $1254.72 |
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