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SI2329DS-T1-GE3
278-SI2329DS-T1-GE3
PDF Datasheet
P-Ch MOSFET, -8V, -6A, 30mR, TO-236, Surface Mount
18 weeks
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Tech Specifications
Package/Case
TO-236-3
Continuous Drain Current (ID)
6A
Drain to Source Voltage (Vdss)
8V
Drain-source On Resistance-Max
30mR
Fall Time
20ns
Gate to Source Voltage (Vgs)
5V
Input Capacitance
1.485nF
Lead Free
Lead Free
SI2329DS-T1-GE3 Description
P-Ch MOSFET, -8V, -6A, 30mR, TO-236, Surface Mount
FAQ
What package or case is SI2329DS-T1-GE3 available in?
SI2329DS-T1-GE3 is available in the TO-236-3 package / case.
What voltage specification is listed for SI2329DS-T1-GE3?
What operating temperature range does SI2329DS-T1-GE3 support?
What is SI2329DS-T1-GE3?
What is the mounting type of SI2329DS-T1-GE3?
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