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SI2369DS-T1-GE3
278-SI2369DS-T1-GE3
PDF Datasheet
P-Channel JFET, 30V, -7.6A ID, 29mR RdsOn, TO-236
16 weeks
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Tech Specifications
Package/Case
TO-236
Continuous Drain Current (ID)
-7.6A
Drain to Source Resistance
29mR
Drain to Source Voltage (Vdss)
30V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.295nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
SI2369DS-T1-GE3 Description
P-Channel JFET, 30V, -7.6A ID, 29mR RdsOn, TO-236
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What is SI2369DS-T1-GE3?
SI2369DS-T1-GE3 is a Single FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.
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