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SI2392ADS-T1-GE3
278-SI2392ADS-T1-GE3
PDF Datasheet
Small Signal Field-Effect Transistor, 3.1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
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Tech Specifications
Package/Case
TO-236-3
Continuous Drain Current (ID)
3.1A
Drain to Source Voltage (Vdss)
100V
Input Capacitance
196pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
SI2392ADS-T1-GE3 Description
Small Signal Field-Effect Transistor, 3.1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
FAQ
What voltage specification is listed for SI2392ADS-T1-GE3?
The listed voltage-related specification for SI2392ADS-T1-GE3 is 100V.
What operating temperature range does SI2392ADS-T1-GE3 support?
Does SI2392ADS-T1-GE3 have quantity-based pricing?
Is SI2392ADS-T1-GE3 currently in stock?
What package or case is SI2392ADS-T1-GE3 available in?
Availability
(In Stock :
1898 )
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.49885 | $0.50 |
| 10+ | $0.39772 | $3.98 |
| 30+ | $0.35485 | $10.65 |
| 100+ | $0.30172 | $30.17 |
| 500+ | $0.27772 | $138.86 |
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Unit Price $0.49885
Subtotal $0.50
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