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SI3417DV-T1-GE3
278-SI3417DV-T1-GE3
PDF Datasheet
Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6
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Tech Specifications
Package/Case
TSOP
Continuous Drain Current (ID)
8A
Drain to Source Resistance
30mR
Drain to Source Voltage (Vdss)
30V
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.35nF
Max Operating Temperature
150°C
SI3417DV-T1-GE3 Description
Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6
FAQ
What operating temperature range does SI3417DV-T1-GE3 support?
SI3417DV-T1-GE3 has an operating temperature range of 150°C.
What voltage specification is listed for SI3417DV-T1-GE3?
Are there related or alternative parts for SI3417DV-T1-GE3?
What is the mounting type of SI3417DV-T1-GE3?
Is SI3417DV-T1-GE3 currently in stock?
Availability
(In Stock :
1585 )
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.36968 | $1.85 |
| 50+ | $0.28732 | $14.37 |
| 150+ | $0.25200 | $37.80 |
| 500+ | $0.20796 | $103.98 |
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