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SI3421DV-T1-GE3
278-SI3421DV-T1-GE3
PDF Datasheet
Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6
16 weeks
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Tech Specifications
Package/Case
TSOP
Continuous Drain Current (ID)
-8A
Drain to Source Resistance
16mR
Drain to Source Voltage (Vdss)
-30V
Fall Time
13ns
Gate to Source Voltage (Vgs)
-20V
Input Capacitance
2.58nF
Max Operating Temperature
150°C
SI3421DV-T1-GE3 Description
Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6
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