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SI3429EDV-T1-GE3
278-SI3429EDV-T1-GE3
PDF Datasheet
Small Signal Field-Effect Transistor, 8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6
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Tech Specifications
Package/Case
TSOP
Continuous Drain Current (ID)
8A
Drain to Source Voltage (Vdss)
20V
Input Capacitance
4.085nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
4.2W
Mount
Surface Mount
SI3429EDV-T1-GE3 Description
Small Signal Field-Effect Transistor, 8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6
FAQ
What is the mounting type of SI3429EDV-T1-GE3?
SI3429EDV-T1-GE3 uses a Surface Mount mounting style based on the listed product specifications.
Is SI3429EDV-T1-GE3 currently in stock?
What is SI3429EDV-T1-GE3?
What operating temperature range does SI3429EDV-T1-GE3 support?
What voltage specification is listed for SI3429EDV-T1-GE3?
Availability
(In Stock :
264 )
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.43200 | $0.43 |
| 10+ | $0.33943 | $3.39 |
| 30+ | $0.30172 | $9.05 |
| 100+ | $0.25200 | $25.20 |
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Subtotal $0.43
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