German
Japanese
Portuguese
Korea
Mexico
Dutch
Vishay
SI3476DV-T1-GE3
278-SI3476DV-T1-GE3
PDF Datasheet
Small Signal Field-Effect Transistor, 4.6A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6
29 weeks
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Package/Case
TSOP
Continuous Drain Current (ID)
4.6A
Drain to Source Resistance
105mR
Drain to Source Voltage (Vdss)
80V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
195pF
Lead Free
Lead Free
SI3476DV-T1-GE3 Description
Small Signal Field-Effect Transistor, 4.6A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6
FAQ
Are there related or alternative parts for SI3476DV-T1-GE3?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
Is SI3476DV-T1-GE3 currently in stock?
What is SI3476DV-T1-GE3?
What voltage specification is listed for SI3476DV-T1-GE3?
What is the mounting type of SI3476DV-T1-GE3?
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
