Vishay_SI4190ADY-T1-GE3
original

Vishay
SI4190ADY-T1-GE3

278-SI4190ADY-T1-GE3
PDF Datasheet
N-Ch MOSFET 100V 8.8mR 18.4A SOIC Surface Mount
27 weeks

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Tech Specifications

Package/Case
SOIC
Continuous Drain Current (ID)
18.4A
Drain to Source Resistance
8.8mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
8.8MR
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.97nF
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SI4190ADY-T1-GE3 Description

N-Ch MOSFET 100V 8.8mR 18.4A SOIC Surface Mount

FAQ

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