Vishay_SI4425BDY-T1-E3
original

Vishay
SI4425BDY-T1-E3

278-SI4425BDY-T1-E3
PDF Datasheet
P-CH MOSFET 30V 8.8A 12mR SOIC N
13 weeks

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Tech Specifications

Package/Case
SOIC
Continuous Drain Current (ID)
8.8A
Drain to Source Resistance
12mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
12mR
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
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SI4425BDY-T1-E3 Description

P-CH MOSFET 30V 8.8A 12mR SOIC N

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