Vishay_SI4459ADY-T1-GE3
original

Vishay
SI4459ADY-T1-GE3

278-SI4459ADY-T1-GE3
PDF Datasheet
P-Channel MOSFET, 30V, 5mR Rds(on), 19.7A, SOIC-8
16 weeks

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Tech Specifications

Package/Case
SOIC
Continuous Drain Current (ID)
19.7A
Drain to Source Resistance
5mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
5MR
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
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SI4459ADY-T1-GE3 Description

P-Channel MOSFET, 30V, 5mR Rds(on), 19.7A, SOIC-8

FAQ

What is the standard lead time for SI4459ADY-T1-GE3?
The standard lead time for SI4459ADY-T1-GE3 is 16 weeks.
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What voltage specification is listed for SI4459ADY-T1-GE3?
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Availability (In Stock : 10336 )
Quantity Unit Price Ext. Price
10+ $0.71143 $7.11
30+ $0.63600 $19.08
100+ $0.56228 $56.23
500+ $0.47828 $239.14
1000+ $0.45428 $454.28
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