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SI4462DY-T1-E3
278-SI4462DY-T1-E3
PDF Datasheet
N-CH MOSFET 200V 1.15A SOIC 17mR Rds(on)
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Tech Specifications
Package/Case
SO
Continuous Drain Current (ID)
1.15A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
480mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
17mR
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
SI4462DY-T1-E3 Description
N-CH MOSFET 200V 1.15A SOIC 17mR Rds(on)
FAQ
Are there related or alternative parts for SI4462DY-T1-E3?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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