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SI4463BDY-T1-E3
278-SI4463BDY-T1-E3
PDF Datasheet
P-Channel FET, 20V, 9.8A ID, 11mR Rds(on), SOIC
13 weeks
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Tech Specifications
Package/Case
SO
Continuous Drain Current (ID)
9.8A
Drain to Source Resistance
11mR
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
11mR
Fall Time
60ns
Gate to Source Voltage (Vgs)
12V
Height
1.55mm
SI4463BDY-T1-E3 Description
P-Channel FET, 20V, 9.8A ID, 11mR Rds(on), SOIC
FAQ
What voltage specification is listed for SI4463BDY-T1-E3?
The listed voltage-related specification for SI4463BDY-T1-E3 is -20V.
Are there related or alternative parts for SI4463BDY-T1-E3?
What operating temperature range does SI4463BDY-T1-E3 support?
What is SI4463BDY-T1-E3?
Is SI4463BDY-T1-E3 currently in stock?
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