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SI4463BDY-T1-GE3
2088-SI4463BDY-T1-GE3
PDF Datasheet
P-Channel MOSFET, 9.8A ID, 20V Vdss, 11mR Rds On, SOIC-8
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Tech Specifications
Package/Case
SO
Continuous Drain Current (ID)
9.8A
Drain to Source Resistance
11mR
Drain to Source Voltage (Vdss)
-20V
Fall Time
75ns
Gate to Source Voltage (Vgs)
12V
Height
1.55mm
Length
5mm
SI4463BDY-T1-GE3 Description
P-Channel MOSFET, 9.8A ID, 20V Vdss, 11mR Rds On, SOIC-8
FAQ
What operating temperature range does SI4463BDY-T1-GE3 support?
SI4463BDY-T1-GE3 has an operating temperature range of 150°C.
What voltage specification is listed for SI4463BDY-T1-GE3?
Are there related or alternative parts for SI4463BDY-T1-GE3?
Is SI4463BDY-T1-GE3 currently in stock?
What is the mounting type of SI4463BDY-T1-GE3?
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