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SI4465DY-T1-E3
278-SI4465DY-T1-E3
Power Field-Effect Transistor, 14A I(D), 8V, 0.009ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8
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Tech Specifications
Package/Case
SO
Continuous Drain Current (ID)
14A
Drain to Source Resistance
9mR
Drain to Source Voltage (Vdss)
-8V
Fall Time
190ns
Gate to Source Voltage (Vgs)
8V
Height
1.55mm
Length
5mm
SI4465DY-T1-E3 Description
Power Field-Effect Transistor, 14A I(D), 8V, 0.009ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8
FAQ
Are there related or alternative parts for SI4465DY-T1-E3?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What voltage specification is listed for SI4465DY-T1-E3?
What operating temperature range does SI4465DY-T1-E3 support?
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