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SI4480DY-T1
285-SI4480DY-T1
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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Tech Specifications
Package/Case
SO
Continuous Drain Current (ID)
6A
Current Rating
6A
Drain to Source Breakdown Voltage
80V
Drain to Source Resistance
35mR
Drain to Source Voltage (Vdss)
80V
Fall Time
22ns
Gate to Source Voltage (Vgs)
20V
SI4480DY-T1 Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FAQ
Are there related or alternative parts for SI4480DY-T1?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What package or case is SI4480DY-T1 available in?
What operating temperature range does SI4480DY-T1 support?
What is SI4480DY-T1?
What voltage specification is listed for SI4480DY-T1?
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