


Vishay
SI4491EDY-T1-GE3
278-SI4491EDY-T1-GE3
PDF Datasheet
MOSFET P-CH 30V 17.3A 8-SO
63 weeks
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Responsible qualityTech Specifications
Package/Case
SOIC
Continuous Drain Current (ID)
17.3A
Drain to Source Voltage (Vdss)
30V
Gate to Source Voltage (Vgs)
25V
Input Capacitance
4.62nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
6.9W
SI4491EDY-T1-GE3 Description
MOSFET P-CH 30V 17.3A 8-SO
FAQ
What package or case is SI4491EDY-T1-GE3 available in?
SI4491EDY-T1-GE3 is available in the SOIC package / case.
What voltage specification is listed for SI4491EDY-T1-GE3?
Is SI4491EDY-T1-GE3 currently in stock?
What operating temperature range does SI4491EDY-T1-GE3 support?
What is the standard lead time for SI4491EDY-T1-GE3?
Availability
(In Stock :
226 )
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.09028 | $1.09 |
| 10+ | $0.89315 | $8.93 |
| 30+ | $0.78343 | $23.50 |
| 100+ | $0.66172 | $66.17 |
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Unit Price $1.09028
Subtotal $1.09



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