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SI4558DY-T1-E3
289-SI4558DY-T1-E3
Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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Tech Specifications
Package/Case
SOIC
Continuous Drain Current (ID)
6A
Drain to Source Resistance
40mR
Drain to Source Voltage (Vdss)
30V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Length
5mm
SI4558DY-T1-E3 Description
Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAQ
What operating temperature range does SI4558DY-T1-E3 support?
SI4558DY-T1-E3 has an operating temperature range of 150°C.
What package or case is SI4558DY-T1-E3 available in?
Are there related or alternative parts for SI4558DY-T1-E3?
What voltage specification is listed for SI4558DY-T1-E3?
Is SI4558DY-T1-E3 currently in stock?
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