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Tech Specifications
Package/Case
SOIC
Continuous Drain Current (ID)
5.3A
Drain to Source Resistance
22mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
22MR
Fall Time
12ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
SI4816DY-T1-E3 Description
30V 5.3A N-Channel MOSFET SOIC 2x
FAQ
Are there related or alternative parts for SI4816DY-T1-E3?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What operating temperature range does SI4816DY-T1-E3 support?
What package or case is SI4816DY-T1-E3 available in?
What is the mounting type of SI4816DY-T1-E3?
What is SI4816DY-T1-E3?
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