German
Japanese
Portuguese
Korea
Mexico
Dutch
Vishay
SI4894BDY-T1-E3
278-SI4894BDY-T1-E3
PDF Datasheet
N-CH JFET 30V 8.9A 11mR SOIC FET
16 weeks
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Package/Case
SOIC
Continuous Drain Current (ID)
8.9A
Drain to Source Resistance
11mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
11mR
Dual Supply Voltage
30V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
SI4894BDY-T1-E3 Description
N-CH JFET 30V 8.9A 11mR SOIC FET
FAQ
What voltage specification is listed for SI4894BDY-T1-E3?
The listed voltage-related specification for SI4894BDY-T1-E3 is 30V.
Are there related or alternative parts for SI4894BDY-T1-E3?
What is SI4894BDY-T1-E3?
What package or case is SI4894BDY-T1-E3 available in?
What operating temperature range does SI4894BDY-T1-E3 support?
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
