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SI4900DY-T1-E3
278-SI4900DY-T1-E3
PDF Datasheet
N-Channel JFET, 60V, 4.3A ID, 58mR Rds On, SOIC-8
13 weeks
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Tech Specifications
Package/Case
SO
Continuous Drain Current (ID)
4.3A
Drain to Source Resistance
58mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
58mR
Fall Time
10ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
SI4900DY-T1-E3 Description
N-Channel JFET, 60V, 4.3A ID, 58mR Rds On, SOIC-8
FAQ
What is SI4900DY-T1-E3?
SI4900DY-T1-E3 is a Single FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.
What operating temperature range does SI4900DY-T1-E3 support?
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