Vishay_SI4925DDY-T1-GE3
original

Vishay
SI4925DDY-T1-GE3

278-SI4925DDY-T1-GE3
PDF Datasheet
P-Channel JFET, 30V, 7.3A ID, 29mR Rds On, SOIC
16 weeks

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Tech Specifications

Package/Case
SOIC
Continuous Drain Current (ID)
7.3A
Drain to Source Resistance
29mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
29mR
Fall Time
16ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
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SI4925DDY-T1-GE3 Description

P-Channel JFET, 30V, 7.3A ID, 29mR Rds On, SOIC

FAQ

Does SI4925DDY-T1-GE3 have quantity-based pricing?
Yes. SI4925DDY-T1-GE3 currently has 5 pricing tier(s), starting from 10 units.
What is the standard lead time for SI4925DDY-T1-GE3?
What operating temperature range does SI4925DDY-T1-GE3 support?
What is SI4925DDY-T1-GE3?
Are there related or alternative parts for SI4925DDY-T1-GE3?
Availability (In Stock : 22653 )
Quantity Unit Price Ext. Price
10+ $0.54685 $5.47
30+ $0.48515 $14.55
100+ $0.40388 $40.39
500+ $0.36968 $184.84
1000+ $0.35177 $351.77
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Unit Price $0.00000
Subtotal $0.00
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