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SI4936BDY-T1-E3
278-SI4936BDY-T1-E3
PDF Datasheet
Dual N-Ch MOSFET, 30V, 6.9A, 35mR Rds On, SOIC
13 weeks
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Tech Specifications
Package/Case
SO
Continuous Drain Current (ID)
6.9A
Drain to Source Resistance
35mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
35mR
Dual Supply Voltage
30V
Fall Time
25ns
FET Type
2 N-Channel
SI4936BDY-T1-E3 Description
Dual N-Ch MOSFET, 30V, 6.9A, 35mR Rds On, SOIC
FAQ
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