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SI4936CDY-T1-E3
278-SI4936CDY-T1-E3
PDF Datasheet
Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
16 weeks
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Tech Specifications
Package/Case
SOIC
Continuous Drain Current (ID)
5.8A
Drain to Source Voltage (Vdss)
30V
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
325pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
SI4936CDY-T1-E3 Description
Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
FAQ
What voltage specification is listed for SI4936CDY-T1-E3?
The listed voltage-related specification for SI4936CDY-T1-E3 is 30V.
What is the standard lead time for SI4936CDY-T1-E3?
What package or case is SI4936CDY-T1-E3 available in?
What is SI4936CDY-T1-E3?
What operating temperature range does SI4936CDY-T1-E3 support?
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