German
Japanese
Portuguese
Korea
Mexico
Dutch
Vishay
SI4943BDY-T1-E3
278-SI4943BDY-T1-E3
PDF Datasheet
P-CH MOSFET 20V 6.3A 19mR SOIC N
13 weeks
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Package/Case
SO
Continuous Drain Current (ID)
6.3A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
19mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
19mR
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
SI4943BDY-T1-E3 Description
P-CH MOSFET 20V 6.3A 19mR SOIC N
FAQ
What operating temperature range does SI4943BDY-T1-E3 support?
SI4943BDY-T1-E3 has an operating temperature range of 150°C.
What is the standard lead time for SI4943BDY-T1-E3?
What is SI4943BDY-T1-E3?
What package or case is SI4943BDY-T1-E3 available in?
Is SI4943BDY-T1-E3 currently in stock?
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
