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Tech Specifications
Package/Case
SMD/SMT
Continuous Drain Current (ID)
3.8A
Drain to Source Resistance
62mR
Drain to Source Voltage (Vdss)
20V
Fall Time
3200ns
Gate to Source Voltage (Vgs)
12V
Height
1.1mm
Length
3.05mm
SI5463EDC-T1-GE3 Description
MOSFET P-CH 20V 3.8A 1206-8
FAQ
What is SI5463EDC-T1-GE3?
SI5463EDC-T1-GE3 is a RF FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.
What is the mounting type of SI5463EDC-T1-GE3?
What voltage specification is listed for SI5463EDC-T1-GE3?
What operating temperature range does SI5463EDC-T1-GE3 support?
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