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SI5515CDC-T1-GE3
278-SI5515CDC-T1-GE3
PDF Datasheet
Power Field-Effect Transistor, 4A I(D), 20V, 0.036ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1206-8, CHIPFET-8
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Tech Specifications
Package/Case
SMD/SMT
Continuous Drain Current (ID)
4A
Drain to Source Resistance
83mR
Drain to Source Voltage (Vdss)
20V
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
8V
Input Capacitance
632pF
Lead Free
Lead Free
SI5515CDC-T1-GE3 Description
Power Field-Effect Transistor, 4A I(D), 20V, 0.036ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1206-8, CHIPFET-8
FAQ
What package or case is SI5515CDC-T1-GE3 available in?
SI5515CDC-T1-GE3 is available in the SMD/SMT package / case.
What voltage specification is listed for SI5515CDC-T1-GE3?
What is the standard lead time for SI5515CDC-T1-GE3?
What is the mounting type of SI5515CDC-T1-GE3?
Is SI5515CDC-T1-GE3 currently in stock?
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