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SI6820DQ-T1-E3
285-SI6820DQ-T1-E3
Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
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Tech Specifications
Package/Case
TSSOP
Continuous Drain Current (ID)
1.9A
Drain to Source Resistance
160mR
Drain to Source Voltage (Vdss)
20V
Fall Time
10ns
Gate to Source Voltage (Vgs)
12V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
SI6820DQ-T1-E3 Description
Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
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