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Tech Specifications
Package/Case
SOIC
Continuous Drain Current (ID)
18.4A
Drain to Source Resistance
118mR
Drain to Source Voltage (Vdss)
250V
Drain-source On Resistance-Max
118MR
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
SI7190DP-T1-GE3 Description
N-CH MOSFET 250V 18.4A 118mR SOIC
FAQ
Are there related or alternative parts for SI7190DP-T1-GE3?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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What is SI7190DP-T1-GE3?
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