


Vishay
SI7252DP-T1-GE3
278-SI7252DP-T1-GE3
PDF Datasheet
100V 36.7A N-Ch MOSFET, 18mΩ Rds(on), SOP-8
27 weeks
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
Continuous Drain Current (ID)
36.7A
Drain to Source Resistance
20mR
Drain to Source Voltage (Vdss)
100V
Fall Time
7ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.17nF
Max Operating Temperature
150°C
SI7252DP-T1-GE3 Description
100V 36.7A N-Ch MOSFET, 18mΩ Rds(on), SOP-8
FAQ
What operating temperature range does SI7252DP-T1-GE3 support?
SI7252DP-T1-GE3 has an operating temperature range of 150°C.
What is the standard lead time for SI7252DP-T1-GE3?
What voltage specification is listed for SI7252DP-T1-GE3?
Is SI7252DP-T1-GE3 currently in stock?
What package or case is SI7252DP-T1-GE3 available in?



.png)





















.png?x-oss-process=image/format,webp/resize,h_32)










