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SI7315DN-T1-GE3
278-SI7315DN-T1-GE3
PDF Datasheet
Power Field-Effect Transistor, 8.9A I(D), 150V, 0.315ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
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Tech Specifications
Continuous Drain Current (ID)
-8.9A
Drain to Source Resistance
262mR
Drain to Source Voltage (Vdss)
-150V
Fall Time
8ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
880pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
SI7315DN-T1-GE3 Description
Power Field-Effect Transistor, 8.9A I(D), 150V, 0.315ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
FAQ
Are there related or alternative parts for SI7315DN-T1-GE3?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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Availability
(In Stock :
246 )
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.52915 | $1.53 |
| 10+ | $1.26685 | $12.67 |
| 30+ | $1.12285 | $33.69 |
| 100+ | $0.96000 | $96.00 |
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Unit Price $1.52915
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