German
Japanese
Portuguese
Korea
Mexico
Dutch
Vishay
SI7611DN-T1-GE3
278-SI7611DN-T1-GE3
PDF Datasheet
P-CH MOSFET -40V, 9.3A, 25mR, SMT
6 weeks
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Continuous Drain Current (ID)
9.3A
Drain to Source Resistance
25mR
Drain to Source Voltage (Vdss)
-40V
Drain-source On Resistance-Max
25mR
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Input Capacitance
1.98nF
SI7611DN-T1-GE3 Description
P-CH MOSFET -40V, 9.3A, 25mR, SMT
FAQ
What voltage specification is listed for SI7611DN-T1-GE3?
The listed voltage-related specification for SI7611DN-T1-GE3 is -40V.
Is SI7611DN-T1-GE3 currently in stock?
What is SI7611DN-T1-GE3?
What is the mounting type of SI7611DN-T1-GE3?
What package or case is SI7611DN-T1-GE3 available in?
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
