Vishay_SI7686DP-T1-E3
original

Vishay
SI7686DP-T1-E3

278-SI7686DP-T1-E3
PDF Datasheet
30V 17.9A N-CH MOSFET SOIC 9.5mR Rds On
16 weeks

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Tech Specifications

Package/Case
SOIC
Continuous Drain Current (ID)
17.9A
Drain to Source Resistance
9.5mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
9.5mR
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
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SI7686DP-T1-E3 Description

30V 17.9A N-CH MOSFET SOIC 9.5mR Rds On

FAQ

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