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SI7686DP-T1-GE3
278-SI7686DP-T1-GE3
PDF Datasheet
30V 17.9A N-CH MOSFET SOIC 9.5mR RdsOn
16 weeks
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Tech Specifications
Package/Case
SOIC
Continuous Drain Current (ID)
17.9A
Drain to Source Resistance
9.5mR
Drain to Source Voltage (Vdss)
30V
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Input Capacitance
1.22nF
SI7686DP-T1-GE3 Description
30V 17.9A N-CH MOSFET SOIC 9.5mR RdsOn
FAQ
What operating temperature range does SI7686DP-T1-GE3 support?
SI7686DP-T1-GE3 has an operating temperature range of 150°C.
Is SI7686DP-T1-GE3 currently in stock?
What package or case is SI7686DP-T1-GE3 available in?
What voltage specification is listed for SI7686DP-T1-GE3?
What is the standard lead time for SI7686DP-T1-GE3?
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